Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2007-10-30

2007-10-30

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S528000, C257S532000, C438S210000, C438S329000

Reexamination Certificate

active

10688000

ABSTRACT:
The bottom side of an N type silicon substrate is connected to a power supply terminal, a second P type epitaxial layer is formed on all sides of the N type silicon substrate, and a device forming portion is provided on the second P type epitaxial layer. A first P type epitaxial layer and an interlayer insulating film are provided on the device forming portion and an N well and a P well are formed on the top surface of the first P type epitaxial layer. The second P type epitaxial layer is connected to a ground terminal via the first P type epitaxial layer, the P well, a p+diffusion region, a via and a wire. Accordingly, a pn junction is formed at the interface between the second P type epitaxial layer and the N type silicon substrate.

REFERENCES:
patent: 6259136 (2001-07-01), Kawaguchi et al.
patent: 6337824 (2002-01-01), Kono et al.
patent: 6541840 (2003-04-01), Terayama et al.
patent: 6768171 (2004-07-01), Disney
patent: 10-012825 (1998-01-01), None
patent: 2002-124636 (2002-04-01), None

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3898954