Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2007-12-04

2007-12-04

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S759000, C257SE31121, C436S169000, C436S169000

Reexamination Certificate

active

11429370

ABSTRACT:
Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interlayer dielectric layer formed on the first conductive layer pattern, a second conductive layer pattern formed on the interlayer dielectric layer, and a first vacuum ultraviolet (VUV) blocking layer which blocks a VUV ray radiated to the semiconductor substrate.

REFERENCES:
patent: 6614684 (2003-09-01), Shukuri et al.
patent: 2004/0191989 (2004-09-01), Ngo et al.
patent: 2006/0001104 (2006-01-01), Ookura
patent: 10-1998-0087543 (1998-12-01), None
patent: 2001-093979 (2001-04-01), None
patent: 100308497 (2001-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3833277