Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1990-02-08

1991-05-28

Munson, Gene M.

357 41, 357 44, H01L 2702

Patent

active

050198890

ABSTRACT:
In an oscillation circuit consisting of an amplification circuit portion composed of transistors of input/output circuit basic cells of a gate array disposed on a semiconductor pellet and an oscillator disposed outside the semiconductor pellet, the amplification circuit portion consists of transistors for an output circuit of the input/output buffer circuit basic cells. The dielectric breakdown characteristics of the amplification circuit portion of the oscillation circuit can be improved because the structure of the transistor for the output circuit is more highly resistant to dielectric breakdown than the structure of the transistor for the input circuit.

REFERENCES:
patent: 4668972 (1987-05-01), Sato et al.
patent: 4682201 (1987-07-01), Lipp
patent: 4682202 (1987-07-01), Tanizawa
patent: 4766475 (1988-08-01), Kawashima
patent: 4893168 (1990-01-01), Takahashi et al.
patent: 4903093 (1990-02-01), Ide et al.
patent: 4920398 (1990-04-01), Yoshio et al.
"Nikkei Microdevice", published by Nikkei McGraw Hill Co., Sep. Issue, 1986, pp. 65-72.

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