Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-09-18
2007-09-18
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S212000, C365S230030, C365S185110, C365S185050
Reexamination Certificate
active
11405931
ABSTRACT:
A semiconductor integrated circuit device includes a global-bit line, first and second section bit lines, a first transistor which connects the global bit line with the first section bit line, a second transistor which connects the global bit line with the second section bit line, a section selection circuit which selects one of the first and the second transistors, and a data latch circuit. The data latch circuit includes a data amplifier circuit which amplifies readout data from the first and the second section bit lines, a first data holding circuit which holds readout data and programming data to the first section bit line, and a second data holding circuit which holds readout data and programming data to the second section bit line.
REFERENCES:
patent: 5515327 (1996-05-01), Matsukawa et al.
patent: 6275434 (2001-08-01), Yamada et al.
patent: 6807101 (2004-10-01), Ooishi et al.
patent: 7061802 (2006-06-01), Nakai
Ken Takeuchi et al., “A Dual Page Programming Scheme for High-Speed Multi-Gb-Scale NAND Flash Memories”, 2000 Symposium on VLSI Circuits Digest of Technical Papers, pp. 156-157.
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