Static information storage and retrieval – Read only systems – Fusible
Reexamination Certificate
2007-05-01
2007-05-01
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read only systems
Fusible
C365S225700
Reexamination Certificate
active
11228311
ABSTRACT:
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.
REFERENCES:
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4642673 (1987-02-01), Miyamoto et al.
patent: 4680698 (1987-07-01), Edwards et al.
patent: 4704678 (1987-11-01), May
patent: 4724517 (1988-02-01), May
patent: 4731642 (1988-03-01), Katto et al.
patent: 4819151 (1989-04-01), May
patent: 4866493 (1989-09-01), Arima et al.
patent: 4918501 (1990-04-01), Komori et al.
patent: 4935790 (1990-06-01), Cappelletti et al.
patent: 4939386 (1990-07-01), Shibata et al.
patent: 4942450 (1990-07-01), Iwashita
patent: 4967326 (1990-10-01), May
patent: 4970565 (1990-11-01), Wu et al.
patent: 4970686 (1990-11-01), Naruke et al.
patent: 4988637 (1991-01-01), Dhong et al.
patent: 5031092 (1991-07-01), Edwards et al.
patent: 5179536 (1993-01-01), Kasa et al.
patent: 5223731 (1993-06-01), Lee
patent: 5243698 (1993-09-01), May
patent: 5293564 (1994-03-01), Sukegawa et al.
patent: 5296397 (1994-03-01), Lee
patent: 5359559 (1994-10-01), Nomura et al.
patent: 5412594 (1995-05-01), Moyal et al.
patent: 5416347 (1995-05-01), Katto et al.
patent: 5452467 (1995-09-01), May et al.
patent: 5457335 (1995-10-01), Kuroda et al.
patent: 5491359 (1996-02-01), May et al.
patent: 5506437 (1996-04-01), May et al.
patent: 5767544 (1998-06-01), Kuroda et al.
patent: 6414368 (2002-07-01), May et al.
patent: 0357333 (1990-03-01), None
patent: 57-134975 (1982-08-01), None
patent: 58-124266 (1983-07-01), None
patent: 59-155968 (1984-09-01), None
patent: 59-194256 (1984-11-01), None
patent: 60-83349 (1985-05-01), None
patent: 60-207385 (1985-10-01), None
patent: 60-254663 (1985-12-01), None
patent: 60-260147 (1985-12-01), None
patent: 63-029400 (1988-02-01), None
patent: 63-079300 (1988-04-01), None
patent: 63-178563 (1988-07-01), None
patent: 01-105547 (1989-04-01), None
patent: 01-137646 (1989-05-01), None
patent: 01-278781 (1989-11-01), None
patent: 1-293537 (1989-11-01), None
patent: 02-002684 (1990-01-01), None
patent: 02-119185 (1990-05-01), None
patent: 2-201800 (1990-08-01), None
patent: 61-124113 (1999-08-01), None
IEEE International Solid-State Circuits Conference, “Nonvolatile Memories”, Y. Naruke, et al., Digest of Technical Papers, Feb. 1989, pp. 128-129 and 311.
International Electron Device Meeting , “A High Performance CMOS Technology for 256K/1MB EPROMs”, G. Gerosa, et al., 1985, pp. 631-634.
The Transactions of the Institute of Electronics, Information, and Communication Engineers, vol. 90, No. 47, May 21, 1990, “A Partially Programmable ROM”, Y. Kasa, et al., pp. 51-53.
Kuroda Kenichi
Matsuo Akinori
Moriuchi Hisahiro
Sakaguchi Jiroh
Shirai Masaki
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Ulsi Systems Co., Ltd.
Le Vu A.
Renesas Technology Corp.
LandOfFree
Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3737525