Semiconductor integrated circuit device

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Reexamination Certificate

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C365S225700

Reexamination Certificate

active

11228311

ABSTRACT:
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

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