Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1981-11-06

1984-03-13

Eisenzopf, Reinhard J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361101, 357 23, H02H 904

Patent

active

044371357

ABSTRACT:
In the past, it has been a problem in integrated circuits using MOSFETs that the gate insulating film of a transmission gate MOSFET is broken down when an abnormally high voltage such as is caused by frictional static electricity is applied to its drain region. This breakdown of the gate insulating film cannot be prevented merely by limiting the voltage level applied to the drain region to a level below the breakdown withstand voltage of the gate insulating film. The reason for this is that even with such voltage limiting, the breakdown of the gate insulating film can still occur when local heating is generated by a relatively large breakdown current flowing through the drain junction. To prevent such a breakdown of the gate insulating film, therefore, a resistance element for limiting the breakdown current is connected in series with the drain region of the transmission gate MOSFET.

REFERENCES:
patent: 3395290 (1968-07-01), Farina
patent: 3403270 (1968-09-01), Pace et al.
patent: 3746946 (1973-07-01), Clark
patent: 3819952 (1974-06-01), Enomoto et al.
patent: 3999212 (1976-12-01), Usuda
patent: 4057844 (1977-11-01), Smedley
IBM Technical Disclosure Bulletin, vol. 13, No. 9, Feb. 1971, p. 2800.
Patent Abstracts of Japan, vol. 4, No. 112, Aug. 12, 1980, p. 24e21.

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