Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-02-14

2006-02-14

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S922000, C257S207000, C257S758000

Reexamination Certificate

active

06998654

ABSTRACT:
A semiconductor integrated circuit device (10) is composed of an LSI function unit (11) and a shield wiring layer (22) formed on the unit. The LSI function unit (11) includes a semiconductor substrate (12) and a first insulating film (13), and the semiconductor substrate (12) is formed with a circuit element including, for example, a MOS transistor (14). The shield wiring layer (22) is composed of a lower shield line (23), a third insulating film (24), an upper shield line (25), and a fourth insulating film (26) sequentially stacked above a second insulating film (17). The directions in which the lower and upper shield lines (23) and (25) are arranged intersect each other.

REFERENCES:
patent: 4535388 (1985-08-01), Kraus et al.
patent: 5723908 (1998-03-01), Fuchida et al.
patent: 6936898 (2005-08-01), Pelham et al.
patent: 02-209735 (1990-08-01), None
patent: 2000-076140 (2000-03-01), None
patent: WO 00/28399 (2000-05-01), None
patent: 2001-244414 (2001-09-01), None
patent: 2002-043516 (2002-02-01), None

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