Semiconductor integrated circuit device

Static information storage and retrieval – Read only systems – Fusible

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S225700

Reexamination Certificate

active

07002830

ABSTRACT:
A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

REFERENCES:
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4642673 (1987-02-01), Miyamoto et al.
patent: 4680698 (1987-07-01), Edwards et al.
patent: 4704678 (1987-11-01), May
patent: 4724517 (1988-02-01), May
patent: 4731642 (1988-03-01), Katto et al.
patent: 4819151 (1989-04-01), May
patent: 4866493 (1989-09-01), Arima et al.
patent: 4918501 (1990-04-01), Komori et al.
patent: 4935790 (1990-06-01), Cappelletti et al.
patent: 4939386 (1990-07-01), Shibata et al.
patent: 4942450 (1990-07-01), Iwashita
patent: 4967326 (1990-10-01), May
patent: 4970565 (1990-11-01), Wu et al.
patent: 4970686 (1990-11-01), Naruke et al.
patent: 4988637 (1991-01-01), Dhong et al.
patent: 5031092 (1991-07-01), Edwards et al.
patent: 5179536 (1993-01-01), Kasa et al.
patent: 5223731 (1993-06-01), Lee
patent: 5243698 (1993-09-01), May
patent: 5293564 (1994-03-01), Sukegawa et al.
patent: 5296397 (1994-03-01), Lee
patent: 5359559 (1994-10-01), Nomura et al.
patent: 5412594 (1995-05-01), Moyal et al.
patent: 5416347 (1995-05-01), Katto et al.
patent: 5452467 (1995-09-01), May et al.
patent: 5457335 (1995-10-01), Kuroda et al.
patent: 5491359 (1996-02-01), May et al.
patent: 5506437 (1996-04-01), May et al.
patent: 5767544 (1998-06-01), Kuroda et al.
patent: 6414368 (2002-07-01), May et al.
patent: 0357333 (1990-03-01), None
patent: 57-134975 (1982-08-01), None
patent: 58-124266 (1983-07-01), None
patent: 59-155968 (1984-09-01), None
patent: 59-194256 (1984-11-01), None
patent: 60-83349 (1985-05-01), None
patent: 60-207385 (1985-10-01), None
patent: 60-254663 (1985-12-01), None
patent: 60-260147 (1985-12-01), None
patent: 63-029400 (1988-02-01), None
patent: 63-079300 (1988-04-01), None
patent: 63-178563 (1988-07-01), None
patent: 01-105547 (1989-04-01), None
patent: 01-137646 (1989-05-01), None
patent: 01-278781 (1989-11-01), None
patent: 1-293537 (1989-11-01), None
patent: 02-002684 (1990-01-01), None
patent: 02-054500 (1990-02-01), None
patent: 02-062793 (1990-03-01), None
patent: 02-119185 (1990-05-01), None
patent: 2-201800 (1990-08-01), None
patent: 61-124113 (1999-08-01), None
IEEE International Solid-State Circuits Conference, ANonvolatile Memories@, Y. Naruke, et al., Digest of Technical Papers, Feb. 1989, pp. 128-129 and 311.
International Electron Device Meeting, AA High Performance CMOS Technology for 256K/1MB EPROMs@, Gerosa, et al., 1985, pp. 631-634.
The Transactions of the Institue of Electronics, Information, and Communication Engineers, vol. 90, No. 47, May 21, 1990, “A Partially Programmable ROM”, Y. Kasa, et al., pp. 51-53.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3682583

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.