Semiconductor integrated circuit device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S226000, C365S185110, C365S189090

Reexamination Certificate

active

07154786

ABSTRACT:
A nonvolatile memory working on a different operating voltage from a logical functional unit is to be operated at high speed with a single line voltage supplied from outside. A nonvolatile memory is disposed in a semiconductor integrated circuit device. This semiconductor integrated circuit device is provided with core regulators for generating from an externally supplied line voltage, different operating line voltages, a PLL regulator, a regulator for power supply circuit and a regulator for decoder. The regulator for power supply circuit and the regulator for decoder respectively generate, from the externally supplied line voltage, a first line voltage and a second line voltage to be supplied to the nonvolatile memory. The core regulators generate line voltages to be supplied to internal modules of the semiconductor integrated circuit device, and the PLL regulator generates a line voltage for the PLL.

REFERENCES:
patent: 6977850 (2005-12-01), Tanzawa
patent: 2002-135104 (2002-05-01), None
patent: WO 00/46809 (2000-08-01), None

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