Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-12-26
2006-12-26
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S226000, C365S185110, C365S189090
Reexamination Certificate
active
07154786
ABSTRACT:
A nonvolatile memory working on a different operating voltage from a logical functional unit is to be operated at high speed with a single line voltage supplied from outside. A nonvolatile memory is disposed in a semiconductor integrated circuit device. This semiconductor integrated circuit device is provided with core regulators for generating from an externally supplied line voltage, different operating line voltages, a PLL regulator, a regulator for power supply circuit and a regulator for decoder. The regulator for power supply circuit and the regulator for decoder respectively generate, from the externally supplied line voltage, a first line voltage and a second line voltage to be supplied to the nonvolatile memory. The core regulators generate line voltages to be supplied to internal modules of the semiconductor integrated circuit device, and the PLL regulator generates a line voltage for the PLL.
REFERENCES:
patent: 6977850 (2005-12-01), Tanzawa
patent: 2002-135104 (2002-05-01), None
patent: WO 00/46809 (2000-08-01), None
Ikai Toshiharu
Ito Takenori
Takano Hibiki
Hoang Huan
Miles & Stockbridge PC
Renesas Technology Corp.
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