Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2006-06-27
2006-06-27
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S511000, C257S512000, C257S525000, C257S526000, C257S557000, C257S575000
Reexamination Certificate
active
07067899
ABSTRACT:
A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.
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patent: 06-104459 (1994-04-01), None
Kanda Ryo
Okawa Shigeaki
Yoshitake Kazuhiro
Huynh Andy
Sanyo Electric Co,. Ltd.
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