Semiconductor integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation

Reexamination Certificate

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Details

C257S511000, C257S512000, C257S525000, C257S526000, C257S557000, C257S575000

Reexamination Certificate

active

07067899

ABSTRACT:
A semiconductor integrated circuit device according to the invention includes an N-type embedded diffusion region between a substrate and a first epitaxial layer in island regions serving as small signal section. The substrate and the first epitaxial layer are thus partitioned by the N-type embedded diffusion region having supply potential in the island regions serving as small signal section. This structure prevents the inflow of free carriers (electrons) generated from a power NPN transistor due to the back electromotive force of the motor into the small signal section, thus preventing the malfunction of the small signal section.

REFERENCES:
patent: 4038680 (1977-07-01), Yagi et al.
patent: 5455447 (1995-10-01), Hutter et al.
patent: 5798560 (1998-08-01), Ohkawa et al.
patent: 6586780 (2003-07-01), Terashima
patent: 06-104459 (1994-04-01), None

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