Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2006-04-04

2006-04-04

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C257S750000, C438S622000, C438S624000

Reexamination Certificate

active

07023091

ABSTRACT:
In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 μm and is smaller than about 1.44 μm, and the width of a second Cu wiring and the diameter of a plug are about 0.18 μm, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.

REFERENCES:
patent: 5675187 (1997-10-01), Numata et al.
patent: 6373136 (2002-04-01), Otsuka et al.
patent: 2004/0173906 (2004-09-01), Saito et al.
patent: 2001-118923 (2001-04-01), None
patent: 2001-298084 (2001-10-01), None
patent: 2002-124565 (2004-04-01), None

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