Semiconductor integrated circuit device

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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Details

C327S436000

Reexamination Certificate

active

07106126

ABSTRACT:
In a conventional semiconductor integrated circuit device, a means for preventing a backflow current has a high on-state resistance, which makes it impossible to reduce the voltage loss in normal operation. A semiconductor integrated circuit device of the invention has a first MOS transistor, a second MOS transistor provided between the first MOS transistor and a power supply terminal, and a means that, in normal operation, keeps the gate of the second MOS transistor at a predetermined potential (preferably the ground potential) and that, when a backflow current is likely, turns the second MOS transistor off. This helps prevent a backflow current while reducing the voltage loss in normal operation.

REFERENCES:
patent: 5862096 (1999-01-01), Yasuda et al.
patent: 6178101 (2001-01-01), Shires
patent: 6441598 (2002-08-01), Ivanov
patent: 6496036 (2002-12-01), Kan
patent: 6525594 (2003-02-01), Fugate et al.
patent: 2003/0214272 (2003-11-01), Nishimaki
patent: 10-341141 (1998-12-01), None
patent: 2002-335626 (2002-11-01), None

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