Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-07-25
2006-07-25
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S185330
Reexamination Certificate
active
07082055
ABSTRACT:
A semiconductor integrated circuit device includes a semiconductor substrate, an element isolation region, a first interconnection, a second interconnection, and a memory cell unit connected between a corresponding one of the first interconnection and a second interconnection. The memory cell unit includes two selection transistors and memory cell transistors of not larger than two. The memory cell transistors are connected between the two selection transistors. The memory cell transistor has a charge storage layer whose side surface lies in the same plane or in substantially the same plane as the side surface of the element isolation regions.
REFERENCES:
patent: 6307807 (2001-10-01), Sakui et al.
patent: 6326661 (2001-12-01), Dormans et al.
patent: 6370081 (2002-04-01), Sakui et al.
patent: 6400604 (2002-06-01), Noda
patent: 6788573 (2004-09-01), Choi
patent: 10-134588 (1998-05-01), None
patent: 10-335497 (1998-12-01), None
patent: 11-261038 (1999-09-01), None
patent: 2000-149581 (2000-05-01), None
R. Shirota, NVSMW, pp. 22-31, “A Review of 256Mbit NAND Flash Memories and NAND Flash Future Trend”, 2000.
K. Imamiya, et al., NVSMW, pp. 78-80, pp. 78-80, “32kbyte three-transistor flash for embedded applications using 0.4 μm NAND flash technology”, 2000.
G. Tao, et al., NVSMW, pp. 130-132, “Reliability aspects of advanced embedded floating-gate non-volatile memories with uniform channel FN tunneling for both program and erase”, 2001.
S. Aritome, et al., IEDM, pp. 61-64, “A 0.67um2Self-Aligned Shallow Trench Isolation Cell(SA-STI Cell) for 3V-only 256Mbit NAND EEPROMs”, 1994.
Ichige Masayuki
Shirota Riichiro
Sugimae Kikuko
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