Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-01-25
2005-01-25
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S510000, C257S513000, C257S063000, C257S064000, C257S065000
Reexamination Certificate
active
06847093
ABSTRACT:
A semiconductor integrated circuit device is formed by a semiconductor substrate having an SiGe layer and a first Si layer epitaxially grown thereover, and on which there are element formation regions each partitioned by element isolation regions; a shallow groove isolation, which has a groove formed in each of the element isolation regions and an insulating film inside of the groove, said groove penetrating through the first Si layer and having a bottom in the SiGe layer; a second Si layer formed between the shallow groove isolation and the SiGe layer; and a semiconductor element formed over the main surface of the semiconductor substrate in the element formation regions. This construction enables a reduction in leakage current via the walls of the shallow groove isolation of the strained substrate, thereby improving the element isolation properties.
REFERENCES:
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 6570217 (2003-05-01), Sato et al.
K. Rim, et al., “Strained Si NMOSFETs for High Performance CMOS Technology, 2001, Symposium on VLSI Technology digest of Technical Papers”, pp. 59-60.
Ichinose Katsuhiko
Ootsuka Fumio
Abraham Fetsum
Antonelli Terry Stout & Kraus LLP
Renesas Tehnology Corp.
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