Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-01-11

2005-01-11

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S536000, C257S537000

Reexamination Certificate

active

06841843

ABSTRACT:
In a semiconductor integrated circuit device, an integrated circuit portion is provided on a surface of a P-type silicon substrate and in a multilayer interconnection layer. The semiconductor integrated circuit device also includes a temperature sensor portion. At the higher level than the multilayer interconnection layer, a sheet member formed of vanadium oxide is provided. The sheet member and a resistor are connected in series between a ground potential wiring and a power-supply potential wiring, and an output terminal is connected to a connection point between the sheet member and the resistor.

REFERENCES:
patent: 5726481 (1998-03-01), Moody
patent: 6104075 (2000-08-01), Karaki
patent: 6720635 (2004-04-01), Koch et al.
patent: 63-300523 (1988-12-01), None
patent: 1-302849 (1989-12-01), None
patent: 9-229778 (1997-09-01), None

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