Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1992-02-19

1993-03-16

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257903, H01L 2711

Patent

active

051947498

ABSTRACT:
In a memory cell of SRAM of CMOS type, load MISFET having a polycrystalline silicon film as area of source, drain and channel is stacked on drive MISFET, and gate electrodes of the drive MISFET and the load MISFET are constituted by conductive films in different layers. Area of source and drain provided on the polycrystalline silicon film has an overlapped area with the gate electrode of the load MISFET.

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Charles Cohen, 3-D IC may augur denser VLSI circuitry, Sep. 22, 1983, p. 92 of Electronics.

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