Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2008-06-10
2008-06-10
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257SE23062, C257SE23063, C257SE23079, C257S685000, C257S723000, C257S777000, C257S668000, C257SE25013, C257SE23052, C257SE25023, C257SE23172, C257SE25029, C257SE23013
Reexamination Certificate
active
07385281
ABSTRACT:
A COC DRAM including a plurality of stacked DRAM chips is mounted on a motherboard by using an interposer. The interposer includes a Si unit and a PCB. The Si unit includes a Si substrate and an insulating-layer unit in which wiring is installed. The PCB includes a reference plane for the wiring in the Si unit. The wiring topology between a chip set and the COC DRAM is the same for every signal. Accordingly, a memory system enabling a high-speed operation, low power consumption, and large capacity is provided.
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Funaba Seiji
Nishio Yoji
Elpida Memory Inc.
Sughrue & Mion, PLLC
Williams Alexander Oscar
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