Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-02-15
2011-02-15
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S209000
Reexamination Certificate
active
07888769
ABSTRACT:
A semiconductor integrated circuit device according to an embodiment of the present invention includes: a semiconductor substrate; an internal circuit formed on the semiconductor substrate, a first potential and a second potential being supplied to the internal circuit, thereby applying an operating voltage to the internal circuit; a fuse disposed above a semiconductor region of a first conductivity type, and electrically connected to the internal circuit, the semiconductor region being supplied with the second potential and being formed in the semiconductor substrate; and a protective element formed in the semiconductor region of the first conductivity type and protecting the internal circuit in response to positive and negative abnormal voltages generated in a wiring through which the fuse and the internal circuit are connected to each other.
REFERENCES:
patent: 5360988 (1994-11-01), Uda et al.
patent: 6762918 (2004-07-01), Voldman
patent: 2006/0118904 (2006-06-01), Liaw
Fukuda Ryo
Kondo Masaki
Nakamura Mitsutoshi
Watanabe Yohji
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Vu Hung
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