Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-12-02
1989-08-22
Sikes, William L.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307456, 307458, 3073172, 357 44, 357 45, H01L 2704
Patent
active
048600652
ABSTRACT:
According to the present invention, an IC device includes an input PNP transistor, a first NPN transistor, a second NPN transistor and an SBD; and the device is characterized in that an isolation layer (16) is provided between the input PNP transistor (1) and the SBD (7); and in that the lead wires by which the emitter of the first NPN transistor (11) and the base of the second NPN transistor (9) are connected to the anode of the SBD (7) are shorter than the lead wire between the base of the input PNP transistor (1) and the cathode of the SBD (7).
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patent: 4628339 (1986-12-01), Vora et al.
patent: 4730126 (1988-03-01), Chen
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"Oxide Isolation Builds a Better Schottky TTL", B. Bechdolt, D. Ferris, P. Griffith, Electronics, Mar. 1, 1979, pp. 111-116.
"ISL, A Fast and Dense Low-Power Logic, Made in a Standard Schottky Process", Jan Lohstroh, IEEE Journal of Solid-State Circuits, vol. SC-14, No. 3, Jun. 1979.
"Advanced Schottky Family"; ALS and AS Applications, Application Report published by Texas Instruments, p. 6.
Mitsubishi Denki & Kabushiki Kaisha
Sikes William L.
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