Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1991-07-31

1994-05-10

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular power supply distribution means

257547, 257401, 257368, H01L 2710, H01L 2715

Patent

active

053110480

ABSTRACT:
Herein disclosed is a semiconductor integrated circuit device, in which a buffer circuit having a MISFET of a second conduction type and arranged in a first region of the principal plane of a semiconductor substrate of a first conduction type is supplied with a first supply voltage and in which an internal circuit having a complementary MISFET and arranged in a second region of the principal plane of the semiconductor substrate different from the first region is supplied with a second supply voltage independent of the first supply voltage at least over the semiconductor substrate and having a potential equal to that of the first supply voltage. The MISFET of the buffer circuit is formed in the principal plane of a well region of a first conduction type formed in the principal plane of the semiconductor substrate. Between the well region of the first conduction type and the semiconductor substrate, there is formed a separating region for separating the two electrically.

REFERENCES:
patent: 3971001 (1976-07-01), Lodi

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