Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1974-10-31

1976-06-01

Borchelt, Archie R.

357 47, 357 49, H01L 2704

Patent

active

039613577

ABSTRACT:
A semiconductor integrated circuit device in which circuit elements to constitute one semiconductor integrated circuit device are divided into one group needing the dielectric isolation of the elements from one another and the other group not needing such dielectric isolation, the elements in the one group are isolated from one another in monocrystalline semiconductor regions defined through dielectric isolation in the substrate, the elements in the other group are formed in those parts of monocrystalline semiconductor region defined through dielectric isolation in the substrate which are separated by the impurity doped regions whose conductivity type is opposite to that of the monocrystalline semiconductor region, and the impurity doped region is connected to the most negative or positive potential of a circuit including at least the elements in the other group, whereby the circuit device can have a high integration density and can operate excellently even in high frequency range.

REFERENCES:
patent: 3648128 (1972-03-01), Kobayashi
patent: 3736193 (1973-05-01), Tucker et al.
patent: 3829889 (1974-08-01), Allison et a.

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