Semiconductor integrated circuit device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307585, 357 45, H01L 2702, H01L 2710, H03K 17687

Patent

active

047807539

ABSTRACT:
A semiconductor integrated circuit device with a complementary type internal logic function element used as a master slice type gate array LSI is disclosed having two transmission gates. A plurality of pairs of transistors are utilized with each pair comprising a first conductivity type transistor and a second conductivity type transistor. A first transmission gate is constructed with the first conductivity type transistor of one pair of transistors out of two pairs of these transistor pairs and the second conductivity type transistor of the other pair. Second transmission gate is constructed with the first conductivity type transistor of the other transistor pair and the second conductivity type transistor of the first transistor pair so that an area required for constructing the two transmission gates is reduced in order to increase the degree of integration.

REFERENCES:
patent: 3457435 (1969-07-01), Burns et al.
patent: 3588635 (1971-06-01), Medwin
patent: 4288804 (1981-09-01), Kikuchi et al.
patent: 4412237 (1983-10-01), Matsumura et al.
patent: 4511814 (1985-04-01), Matsuo et al.
patent: 4513307 (1985-04-01), Brown
"A 3000-Gate CMOS Masterslice LSI", Proceedings of the 11th Conference on Solid State Devices, Tokyo, 1979.

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