Patent
1988-02-16
1988-12-13
James, Andrew J.
357 22, 357 26, H01L 2904
Patent
active
047914718
ABSTRACT:
In a semiconductor integrated circuit device, a plurality of a field effect transistors are formed on a (110) crystal surface of a group III-V compound semiconductor substrate having a zinc blend type crystal structure.
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Futatsugi Toshiro
Kawata Haruo
Onodera Tsukasa
Crane Sara W.
Fujitsu Limited
James Andrew J.
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