Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1993-03-09
1996-01-09
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
365154, 257903, H01L 2711
Patent
active
054830834
ABSTRACT:
A memory cell of the type employing a pair of cross-coupled CMOS inverters of a SRAM is provided in which the load MISFETs are stacked above the semiconductor substrate and over the drive MISFETs. Each load MISFET of a memory cell consists of a source, drain and channel region formed of a semiconductor strip, such as a polycrystalline silicon film strip, and a gate electrode consisting of a different layer conductive film than that of the drive MISFETs. A wiring line, formed as a separate conductive layer, is provided in the stacking arrangement of the drive and load MISFETs of a memory cell for applying a ground potential to source regions of the drive MISFETs thereof.
REFERENCES:
patent: 4476475 (1984-10-01), Naem et al.
patent: 4555721 (1985-11-01), Bansal et al.
patent: 4571609 (1986-02-01), Hatano
patent: 4653025 (1987-03-01), Minato et al.
patent: 4656731 (1987-04-01), Lam et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4774203 (1988-09-01), Ikeda et al.
patent: 4794561 (1988-12-01), Hsu
patent: 4803534 (1989-02-01), Koike et al.
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4841481 (1989-06-01), Ikeda et al.
patent: 4890148 (1989-12-01), Ikeda et al.
patent: 4894801 (1990-01-01), Saito et al.
patent: 5194749 (1993-03-01), Meguro et al.
IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1983, pp. 273-277.
Charles Cohen, 3-d IC May Augur Denser VLSI Circuitry; Multiple Layers Are a Possibility; Sep. 22, 1983, p. 92, Electronics International.
Hashimoto Naotaka
Hashimoto Takashi
Honjou Shigeru
Kaga Toru
Koike Atsuyoshi
Hitachi , Ltd.
Larkins William D.
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