Semiconductor integrated circuit device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307200B, 307568, H01L 2978

Patent

active

046912177

ABSTRACT:
Disclosed is a semiconductor integrated circuit device comprising a protective circuit including a MOSFET which is connected directly to a bonding pad and which is connected in the form of a diode, and a resistor which is connected to the bonding pad at a stage posterior to the MOSFET. A drain region of the MOSFET is connected to the bonding pad, and has a large area of at least a certain fixed value in order to raise a voltage at which a P-N junction is destroyed.

REFERENCES:
patent: 3947727 (1976-03-01), Stewart
patent: 4342045 (1982-07-01), Kim
patent: 4385337 (1983-05-01), Asano
patent: 4609931 (1986-09-01), Koike

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