Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

1986-02-03

1988-01-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 57, 437200, 437229, 437933, H01L 21265

Patent

active

047176849

ABSTRACT:
A semiconductor integrated circuit device wherein the source and drain regions of a MOSFET in an internal circuit have lightly doped drain (LDD) structures in order to suppress the appearance of hot carriers, and the source and drain regions of a MOSFET in an input/output circuit have structures doped with phosphorus at a high impurity concentration, in order to enhance an electrostatic breakdown voltage.

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Ralhmam, "An Optimized 0.5 Micron LDD Transistor", IEDM, 1983, pp. 237-239.
Oguna, "Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor" IEEE Trans. on Electron Devices, ED 27, Aug. 80, pp. 1359-1367.
Tsang, "Fabrication of High Performance LDDFETS with Oxide Sidewall-Spacer Technology," IEEE Journal of Solid State Circuits, vol. SC-17, No. 2, Apr. 82, pp. 220-226.

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