Semiconductor integrated circuit capacitor

Details Semiconductor integrated circuit capacitor Semiconductor integrated circuit capacitor

1982-05-26

1984-04-10

Weisstuch, Aaron

Metal working

Method of mechanical manufacture

Assembling or joining

357 51, 357 59, 427 79, 427 80, H01L 2170

Patent

active

044412495

ABSTRACT:
Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer is formed by LPCVD using silane and phosphine at a temperature in the range from about 570 degrees C. to 595 degrees C.
These capacitors are relatively precisely valued devices used particularly in applications such as filter/codecs. However, they are useful wherever integral capacitors are needed having high dielectric strength polyoxides, including such semiconductor integrated circuit devices as EPROMs and dynamic RAMs.

REFERENCES:
patent: 4391032 (1983-07-01), Schulte

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