Semiconductor integrated circuit capable of correcting wiring sk

Details Semiconductor integrated circuit capable of correcting wiring sk Semiconductor integrated circuit capable of correcting wiring sk

1992-11-18

1994-03-15

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257776, 257781, 257758, H01L 2348, H01L 2944

Patent

active

052948374

ABSTRACT:
A plurality of standard cells are placed on a semiconductor substrate. A first aluminum wiring layer is connected to those standard cells. Below the first aluminum wiring layer, a second wiring layer is formed which is not connected to the standard cells and which, together with the first wiring layer, forms a capacitor. Between the first and second aluminum wiring layers, an insulating layer is formed. Wiring skew is adjusted by making through-holes in the insulating layer, and connecting the first and second aluminum wiring layers to each other via as many through-holes as required to vary the capacitance between them.

REFERENCES:
patent: 4587549 (1986-05-01), Ushika
patent: 4916521 (1990-04-01), Yoshikawa et al.
patent: 4924290 (1990-05-01), Enkaku et al.
patent: 5025303 (1991-06-01), Brighton
patent: 5034799 (1991-07-01), Tomita et al.
patent: 5083188 (1992-01-01), Yamagata
patent: 5117280 (1992-05-01), Adachi

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