Semiconductor integrated circuit apparatus

Details Semiconductor integrated circuit apparatus Semiconductor integrated circuit apparatus

2008-07-15

2008-07-15

Pascal, Robert J. (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

Reexamination Certificate

active

07400199

ABSTRACT:
A capacitor12is formed by laminating a lower electrode12b, a dielectric12eand an upper electrode12tin this order. An inductor14is formed as a thin metal wiring of a spiral shape so as to have an inductor component. The inductor14is formed in the same wiring layer and of the same metal material as the lower electrode12bof the capacitor12connected to a base electrode11bof a transistor11. The DC bias is inputted to the base B of the transistor11through the inductor14of a spiral shape from the DC bias supply wiring BP, and a radio frequency signal is inputted to the base B of the transistor11through the capacitor12.

REFERENCES:
patent: 5760456 (1998-06-01), Grzegorek et al.
patent: 6028348 (2000-02-01), Hill
patent: 6804500 (2004-10-01), Yamaguchi
patent: 7276975 (2007-10-01), Tateoka et al.
patent: 2001-196865 (2001-07-01), None

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