Semiconductor integrated circuit and source...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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C327S541000, C327S534000

Reexamination Certificate

active

10899004

ABSTRACT:
This disclosure concerns semiconductor integrated circuit includes a semiconductor substrate; a plurality of well regions formed on one surface of the semiconductor substrate and electrically isolated from each other; a plurality of MOS transistors formed in the well regions; and a substrate bias generator applying substrate biases to the individual well regions based on actually measured process-derived variance of the MOS transistors in threshold voltage to bring the threshold voltages of the respective MOS transistors into conformity with a normal threshold voltage.

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patent: 2005/0116765 (2005-06-01), Sakiyama et al.
patent: 2002-111470 (2002-04-01), None
T. Kuroda, et al., IEEE Journal of Solid-State Circuits, vol. 31, No. 11, pp. 1770-1779. “A 0.9-V, 150-MHZ, 10-MW, 4 MM2, 2-D Discrete Cosine Transform Core Processor With Variable Threshold-Voltage (VT) Scheme”, Nov. 1996.
M. Mizuno, et al., IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Session 18, Paper SA 18.2, pp. 300-301, “Elastic-VT CMOS Circuits for Multiple On-Chip Power Control”, 1996.
J. Tschanz, et al., IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Session 25, Paper SA 25.7, pp. 422-423, “Adaptive Body Bias for Reducing Impacts of Die-To-Die and Within-Die Parameter Variations on Microprocessor Frequency and Leakage”, 2002.

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