Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2005-06-14
2005-06-14
Phan, Trong (Department: 2818)
Static information storage and retrieval
Floating gate
Particular connection
C365S185080
Reexamination Certificate
active
06906954
ABSTRACT:
0 Owing to the above, even with the single-layer gate process such as single-layer polysilicon gate process, it is possible to obtain a semiconductor integrated circuit such as system LSI in which a nonvolatile memory which is excellent in data retention capability is merged and packaged with a DRAM etc. Further, since the nonvolatile memory of high reliability can be formed without adding any step to a related art manufacturing process, such as a standard CMOS manufacturing process, the present invention may be readily applied to an LSI in which the nonvolatile memory and a logic LSI, or the nonvolatile memory and a DRAM are merged and packaged on an identical semiconductor substrate. Accordingly, a system LSI in which a flash memory is merged and packaged can be provided without increasing the cost of manufacture.
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Komori Kazuhiro
Kubota Katsuhiko
Okuyama Kousuke
Shukuri Shoji
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