Semiconductor integrated circuit and method of making the same

Details Semiconductor integrated circuit and method of making the same Semiconductor integrated circuit and method of making the same

1991-10-28

1993-03-30

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With large area flexible electrodes in press contact with...

257273, 257274, 257213, 257369, 257370, 257371, 257378, H01L 2702, H01L 2972

Patent

active

051988801

ABSTRACT:
For providing a semiconductor integrated circuit device including CCD type, bipolar type and MOS type integrated circuits in only one chip, island-shaped epitaxial layers of opposite conductivity type are disposed in a semiconductor substrate of one conductivity type having a low impurity concentration. A field oxide layer is provided so as to surround a periphery of an exposed surface of each epitaxial layer. A buried layer of opposite conductivity type having a high impurity concentration is is interposed between the semiconductor substrate and each epitaxial layer in such a manner that at least one edge thereof terminates to the lower surfaace of the field oxide layer. The CCD type integrated circuit is provided in the semiconductor substrate, and the bipolar type and MOS type integrated circuits are arranged in the epitaxial layers.

REFERENCES:
patent: 4130826 (1978-12-01), Bachle et al.
patent: 4152715 (1979-05-01), Wang
patent: 4231810 (1980-11-01), Jantsch et al.
patent: 4247788 (1981-01-01), Bluzer
patent: 4642877 (1987-02-01), Garner et al.
patent: 4764480 (1988-08-01), Vora
patent: 4855244 (1987-08-01), Hutter et al.
patent: 4859624 (1989-08-01), Goto
patent: 4879255 (1989-11-01), Deguchi et al.
patent: 4918026 (1990-04-01), Kosiak et al.
patent: 4926233 (1990-05-01), Hutter
patent: 4943536 (1990-07-01), Havemann
patent: 4975750 (1990-12-01), Hayashi et al.
patent: 4994888 (1991-02-01), Taguchi et al.
patent: 5060044 (1991-10-01), Tomassetti
Terman, "Combining bipolar and FET devices on a single silicon substrate", IBM TDB, vol. 11, No. 10, Mar./1969 pp. 1270-1271.
Chang, "FET-Bipolar integration", IBM TDB, vol. 14, No. 1, Jun./1971, pp. 350-351.

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