Semiconductor integrated circuit and method of fabricating same

Details Semiconductor integrated circuit and method of fabricating same Semiconductor integrated circuit and method of fabricating same

1995-05-23

1999-06-22

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257900, 257350, 257408, H01L 2976

Patent

active

059144980

ABSTRACT:
A semiconductor integrated circuit comprising thin-film transistors in each of which the second wiring is prevented from breaking at steps. A silicon nitride film is formed on gate electrodes and on gate wiring extending from the gate electrodes. Substantially triangular regions are formed out of an insulator over side surfaces of the gate electrodes and of the gate wiring. The presence of these substantially triangular side walls make milder the steps at which the second wiring goes over the gate wiring. This suppresses breakage of the second wiring.

REFERENCES:
patent: 5200352 (1993-04-01), Pfiester
patent: 5324974 (1994-06-01), Liao
patent: 5430320 (1995-07-01), Lee
patent: 5444282 (1995-08-01), Yamaguchi et al.
patent: 5640041 (1997-06-01), Lur et al.

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