Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2011-04-12
2011-04-12
Tan, Vibol (Department: 2819)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S204000, C257S208000, C326S047000, C326S101000
Reexamination Certificate
active
07923755
ABSTRACT:
In the present invention, a decoupling capacitance circuit, a first output terminal and a second output terminal are provided. The decoupling capacitance circuit comprises a TDDB control circuit consisting of a first Tr and a second Tr, and a third Tr. Conductivity types of the first and second Trs are different from each other. A source of the first Tr is connected to a first power supply wiring, and a drain of the first Tr is connected to a gate of the second Tr. A source of the second Tr is connected to a second power supply wiring, and a drain of the second Tr is connected to a gate of the first Tr. The third and first Trs have the same conductivity type. A source and a drain of the third Tr are connected to the first power supply wiring, and a gate of the third Tr is connected to the drain of the second Tr. The first output terminal is connected to the drain of the first Tr, and the second output terminal is connected to the drain of the second Tr.
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Mizushino Emi
Nishimura Hidetoshi
Yano Junichi
McDermott Will & Emery LLP
Panasonic Corporation
Tan Vibol
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