Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2007-10-30
2010-02-23
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S177000, C257S784000, C257SE23024, C257SE21476, C438S612000
Reexamination Certificate
active
07667316
ABSTRACT:
A semiconductor integrated circuit includes a power transistor formed on a semiconductor substrate, a plurality of first metal patterns and a plurality of second metal patterns which are formed right above the power transistor and function as a first electrode and as a second electrode of the power transistor, respectively, a plurality of first buses each electrically connected with, of a plurality of first metal patterns, a corresponding first metal pattern, a plurality of second buses each electrically connected with, of a plurality of second metal patterns, a corresponding second metal pattern, wherein one contact pad is provided to each of a plurality of first buses and a plurality of second buses.
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U.S. Appl. No. 11/945,605, filed Nov. 27, 2007, Fukamizu et al.
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U.S. Appl. No. 12/038,060, filed Feb. 27, 2008.
Fukamizu Shingo
Katsuyama Takashi
Nabeshima Yutaka
Mandala Victor A
McDermott Will & Emery LLP
Moore Whitney
Panasonic Corporation
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