Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-12-27
2005-12-27
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S088000, C257S203000, C257S207000, C257S208000, C257S209000, C257S222000, C257S225000, C257S231000, C257S232000, C257S258000
Reexamination Certificate
active
06979841
ABSTRACT:
A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).
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Semiconductor Energy Laboratory Co,. Ltd.
Soward Ida M.
Zarabian Amir
LandOfFree
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