Semiconductor integrated circuit and a method for manufacturing

Details Semiconductor integrated circuit and a method for manufacturing Semiconductor integrated circuit and a method for manufacturing

1992-09-08

1995-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437195, H01L 2144

Patent

active

054200687

ABSTRACT:
A method for manufacturing a semiconductor device of the present invention comprises the following steps (1) through (7) of, (1) forming a lower insulation film thicker than a metal wiring layer to be formed in order on a semiconductor substrate, a first conductive film and an upper insulation film; (2) removing the upper insulation film in the wiring formation area and then exposing the lower insulation film by etching the first conductive film; (3) forming concave grooves in the lower insulation film by etching the film using as a mask the upper insulation film whose wiring formation area is removed or a photoresist applied to the patterning of the upper insulation film; (4) forming a second conductive film on the whole surface including the concave grooves and successively forming sidewalls made of the insulation film in the sides of the grooves; (5) forming metallic wiring layers by electrolytic plating in the grooves wherein the said sidewalls have been formed by electric power supplied from the second conductive film; (6) removing the sidewall, the second conductive film and the upper insulation film all in the area where no metallic wiring layer exists, and (7) removing the first conductive film.

REFERENCES:
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4764484 (1988-08-01), Mo
patent: 4963512 (1990-10-01), Iwanaga et al.
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5091339 (1992-02-01), Carey

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