Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1996-04-17

1999-03-09

Nelms, David C.

Static information storage and retrieval

Powering

36518909, 327537, G11C 514, H03K 3353

Patent

active

058810129

ABSTRACT:
A frequency switching circuit is controlled by a low address strobe signal XRAS. A sub-boosted power supply generating circuit is driven at a low frequency generated by a first oscillating circuit during the standby of a DRAM, and at a high frequency generated by a second oscillating circuit during the operation of the DRAM. The sub-boosted power supply generating circuit is driven in a shorter cycle during the operation than during the standby. Consequently, charges are supplied to a booster power source to boost the voltage level thereof. Accordingly, even if the period of the operation state is increased, a drop in voltage level of the boosted power supply caused by a transistor off leak current and a junction leak current can be controlled. Thus, the malfunction of a circuit can be prevented from occurring due to the drop in voltage level of the boosted power supply. The drop in voltage level of the boosted power supply can be controlled during the operation of the DRAM so that it is possible to implement a boosted power supply generating circuit which can prevent the malfunction of the circuit from occurring.

REFERENCES:
patent: 5335205 (1994-08-01), Ogihara
patent: 5396114 (1995-03-01), Lee
patent: 5434820 (1995-07-01), Kim
patent: 5446418 (1995-08-01), Hara
patent: 5526253 (1996-06-01), Duley

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