Semiconductor integrated circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

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Details

257758, 257776, H01L 2702, H01L 2968, H01L 2348

Patent

active

052027511

ABSTRACT:
A semiconductor integrated circuit having, for instance, a power source side conductor and an earth side conductor which are constructed such that the two conductors are formed into two layers mutually laminated in parallel, and a dielectric substance is interposed between the two layers for providing a capacitance. In this manner, the integrated circuit is operable such that a comparatively large capacitor is connected in the power source circuit thereof.

REFERENCES:
patent: 4524377 (1985-06-01), Eguchi
patent: 4583111 (1986-04-01), Early
K. Itoh et al., "An Experimental 1Mb DRAM with On-Chip Voltage Limiter", IEEE International Solid-State Circuits Conference, Feb. 24, 1984, pp. 282-283.

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