Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1992-06-29
1993-04-13
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257758, 257776, H01L 2702, H01L 2968, H01L 2348
Patent
active
052027511
ABSTRACT:
A semiconductor integrated circuit having, for instance, a power source side conductor and an earth side conductor which are constructed such that the two conductors are formed into two layers mutually laminated in parallel, and a dielectric substance is interposed between the two layers for providing a capacitance. In this manner, the integrated circuit is operable such that a comparatively large capacitor is connected in the power source circuit thereof.
REFERENCES:
patent: 4524377 (1985-06-01), Eguchi
patent: 4583111 (1986-04-01), Early
K. Itoh et al., "An Experimental 1Mb DRAM with On-Chip Voltage Limiter", IEEE International Solid-State Circuits Conference, Feb. 24, 1984, pp. 282-283.
Kabushiki Kaisha Toshiba
Prenty Mark V.
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