Data processing: artificial intelligence – Neural network – Structure
Patent
1996-06-11
1999-08-10
Hafiz, Tariq R.
Data processing: artificial intelligence
Neural network
Structure
706 15, 706 26, G06F 1518
Patent
active
059373997
DESCRIPTION:
BRIEF SUMMARY
TECHNOLOGICAL FIELD
The present invention relates to a semiconductor integrated circuit. In more detail, the present invention relates to a semiconductor integrated circuit which is constructed from neuron MOS transistors.
BACKGROUND ART
In the field of semiconductor integrated circuits, the large scale integration of such circuits has made progress as a result of the miniaturization of the elements. When the elements are miniaturized, it is not merely the case that the operational speed of the elements increases, but the number of elements which can be placed on a single chip increases, so that the functions per chip can be increased. A good example of this is microprocessor LSI; in current leading edge microprocessor chips, the element dimensions are on the level of 0.5 microns, and the number of elements per chip reaches as high as several million. The cache memory and floating point decimal calculation unit and the like, which were conventionally placed on a separate chip from the microprocessor chip, have become able to be placed simultaneously on one microprocessor chip, since the circuit components themselves have become smaller as a result of the miniaturization of the elements, and this has played a great role in the improvement of computer performance.
However, in concert with the miniaturization of the elements and large scale integration, a number of problems have become apparent. One such problem is the hot carrier problem, in which, since a fixed power source voltage is applied to the minute elements, a strong electric field is generated within the elements, the accelerated carriers become hot carriers, and are injected into the gate oxide film, and the element characteristics tend to worsen. Furthermore, problems are also presented by difficulties in the layout and formation of wiring which is necessary to connect elements among the several million elements on a single chip. As a result of such problems, the present state is such that further miniaturization of the elements has become extremely difficult. Accordingly, there is little prospect for an improvement in the functions of the LSI chips in the future.
Such problems were solved by the invention of the neuron MOS transistor and logical circuits employing such neuron MOS transistors (inventors: Tadashi Shibata, Tadahiro Ohmi, Japanese Patent Application, First Publication, No. Hei 3-6679, and Japanese Patent Application No. Hei 3-83152). The neuron MOS transistor is a highly functional element possessing functions similar to those of a living nerve cell; it has a floating gate and a plurality of input coupling electrodes which are capacitively coupled with this floating gate, calculates a weighted average of the input signals from the plurality of input coupling electrodes at the floating gate level, and based on the results, the ON and OFF state of the transistor is controlled. In contrast to conventional transistors, which are termed 3 terminal devices in that the ON and OFF state of the current flowing between two terminals is controlled by means of a third terminal, the neuron MOS transistor is termed a 4 terminal device, in that a plurality of fourth terminals are provided, which are capable of controlling the method of control of the third terminal, which controls the ON and OFF state of the current flowing between two other terminals. Because the function of the element itself is high, if such an element is employed in a logic circuit, the number of elements or wirings necessary to realize a certain logical function is dramatically smaller than that in the case in which conventional CMOS logical circuits are employed. Furthermore, flexible signal processing, which is very difficult to achieve with circuits employing conventional transistors, in which a simple determination is made as to whether one input has a value of 0 or 1, and the ON and OFF state of the transistor is thus controlled, can be realized in a simple manner, and it is easily possible to construct flexible logical circuits, real-time rule-variable matching circ
REFERENCES:
patent: 5521858 (1996-05-01), Shibata
patent: 5539329 (1996-07-01), Shibata
patent: 5661421 (1997-08-01), Ohmi
patent: 5682109 (1997-10-01), Ohmi
patent: 5706403 (1998-01-01), Shibata et al.
Kotani Koji
Ohmi Tadahiro
Shibata Tadashi
Hafiz Tariq R.
Rhodes Jason W.
Tadahiro OHMI
Tadashi Shibata
LandOfFree
Semiconductor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1130886