Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1983-03-01

1986-09-02

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 22, 357 234, 357 41, 357 42, 357 51, 357 59, 357 20, 365154, G11C 1140, H01L 2978, H01L 2704, H03K 19094

Patent

active

046098356

ABSTRACT:
Disclosed is a semiconductor integrated circuit which comprises an n-type silicon substrate, a p-type well region having an opening at a part thereof, which is formed on the surface portion of the substrate, an MOS transistor formed in the p-type region and a resistance layer extended from the drain region of the MOS transistor to the opening of the p-type well region through a insulating film formed on the surface of the substrate, in which the drain region of the MOS transistor is electrically connected to the silicon substrate through the resistance layer so that a current is supplied to the MOS transistor.

REFERENCES:
patent: 3821776 (1974-06-01), Hayashi et al.
patent: 4089022 (1978-05-01), Asai et al.
patent: 4092735 (1978-05-01), McElroy
patent: 4125854 (1978-11-01), McKenny et al.
Gaensslen et al., IBM Tech. Discl. Bulletin, vol. 13, No. 2, Jul. 1970, pp. 302-303.
Dennard et al., IBM Tech. Discl. Bull., vol. 11, No. 6, Nov. 1968, pp. 592-593.
Yoshida et al., IEEE J. of Solid State Circuits, vol. SC 11, No. 4, Aug. 1976, "High Power MOSFET".

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