Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1991-08-20

1992-12-08

Lee, John D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257277, H01L 2978

Patent

active

051702355

ABSTRACT:
A semiconductor integrated circuit includes a field effect transistor on a dielectric substrate, a rear surface electrode on a rear surface of the dielectric substrate, a gate bias bonding pad for applying a bias to a gate of the field effect transistor, a current path between the pad and the gate impedance matched with the gate, and a via-hole connecting the source or the drain of the field effect transistor with the rear surface electrode. The current path and the rear surface electrode are electrically connected with each other by an auxiliary current path through a high resistance material that does not change the impedance at the gate. Thus, static electricity charging the gate bias bonding pad or a capacitor in the gate bias circuit during the fabrication process flows not through the gate of the FET but through the auxiliary current path, whereby the gate is protected from electrostatic breakdown.

REFERENCES:
patent: 5027181 (1991-06-01), Larik et al.
patent: 5028819 (1991-07-01), Wei et al.

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