Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1980-03-21

1983-04-12

Clawson, Jr., Joseph E.

357 35, 357 38, 357 52, H01L 2948

Patent

active

043800211

ABSTRACT:
A semiconductor integrated circuit with a short turn-off time in which a high breakdown voltage semiconductor element and a Schottky barrier diode are fabricated into a semiconductor substrate, is disclosed. In the integrated circuit, within a semiconductor substrate of a first conductivity type, a diffusion layer with a low impurity concentration disposed deeply which is used as one layer of a high breakdown voltage semiconductor element formed by a high breakdown voltage process and a diffusion layer with a high impurity concentration disposed more shallowly than the diffusion layer with a low impurity concentration, are formed so as to partially couple with each other. The diffusion layer with the high impurity concentration is used for both the ohmic contact for the electrode of the diffusion layer with the low impurity concentration and for a guard ring for a Schottky barrier diode. With such a construction, a Schottky barrier diode may be assembled into a high breakdown voltage semiconductor element with a minimum increase of area. Accordingly, the semiconductor integrated circuit obtained has a high degree of integration and a short turn-off time.

REFERENCES:
patent: 3571674 (1971-03-01), Yu et al.
patent: 3623029 (1971-11-01), Davidson
patent: 3737742 (1973-06-01), Brever et al.
patent: 3909837 (1975-09-01), Kronlage
patent: 3943554 (1976-03-01), Russell et al.
patent: 4119446 (1978-10-01), Mastroianni
patent: 4199860 (1980-04-01), Beelitz et al.
R. Noyce et al., "Schottky Diodes Make IC Sense," Electronics, Jul. 21, 1969, pp. 74-80.

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