Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2007-09-21
2011-10-18
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S202000, C257S204000, C257S207000, C257S390000, C257S401000, C257S909000, C257S919000, C257SE27108
Reexamination Certificate
active
08039874
ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor IC that includes a plurality of standard cells arranged in a first direction on a semiconductor substrate, and a first diffusion layer connected to a first power source and a second diffusion layer connected to a second power source in the each standard cell, wherein the first diffusion layers as well as the second diffusion layers of neighboring standard cells are integrally formed.
REFERENCES:
patent: 4570176 (1986-02-01), Kolwicz
patent: 5777941 (1998-07-01), Pascucci
patent: 2005/0205894 (2005-09-01), Sumikawa et al.
patent: 9-289251 (1997-11-01), None
patent: 2005-229061 (2005-08-01), None
English Translation of JP09289251A (P1996-100926).
English Language Translation of JP2005-229061A (P2004-038795).
V. Chan et al., “Strain for CMOS Performance Improvement,” IEEE 2005 Custom Integrated Circuits Conference, pp. 667-674.
Eimitsu Masatomo
Saeki Takanori
Chen Yu
Foley & Lardner LLP
Jackson, Jr. Jerome
Renesas Electronics Corporation
LandOfFree
Semiconductor integrated circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4278650