Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2010-02-01

2010-10-05

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

C257S202000, C257S206000, C257S210000, C257S369000, C257SE27108

Reexamination Certificate

active

07808017

ABSTRACT:
A semiconductor integrated circuit having a first p-type MOS transistor; a first n-type MOS transistor; a second p-type MOS transistors; a and second n-type MOS transistors having fourth gate electrodes disposed so as to be adjacent to the second diffused regions of the first n-type MOS transistor. The semiconductor integrated circuit further having an absolute value of a threshold voltage of the second p-type MOS transistor being higher than an absolute value of a threshold voltage of the first p-type MOS transistor, and an absolute value of a threshold voltage of the second n-type MOS transistor being higher than an absolute value of a threshold voltage of the first n-type MOS transistor.

REFERENCES:
patent: 4570176 (1986-02-01), Kolwicz
patent: 6872990 (2005-03-01), Kang
patent: 2005/0280031 (2005-12-01), Yano
patent: 2006/0271902 (2006-11-01), Yamashita et al.
patent: 2007/0111405 (2007-05-01), Watanabe et al.
patent: 2008/0105904 (2008-05-01), Sumikawa et al.
patent: 58-127348 (1983-07-01), None
patent: 2-54576 (1990-02-01), None
patent: 2003-188361 (2003-07-01), None
patent: 2006-245390 (2006-09-01), None

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