Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1991-02-11

1993-08-24

Pascal, Robert J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

3072966, 3072968, 307264, H03K 301

Patent

active

052392074

ABSTRACT:
A semiconductor integrated circuit comprises a first MOS transistor, a capacitor element, a second MOS transistor, and a node. One current path of the first MOS transistor is connected to a first power source, and the gate and the other current path thereof are connected together. The capacitor element is connected between a second power source and the other current path of the first MOS transistor. The second MOS transistor is of the same conductivity type as the first MOS transistor. One current path of the second MOS transistor is connected to the first power source, and the gate thereof is connected to the gate of the first MOS transistor. The node is connected to the other current path of the second MOS transistor. The node is pre-charged at a predetermined potential level by a current flowing from the other current path of the second MOS transistor.

REFERENCES:
patent: 4686387 (1987-08-01), Rumelhard
patent: 4935644 (1990-06-01), Tsujimoto
patent: 4954769 (1990-09-01), Kalthoff
"The Design and Analysis of `VLSI Circuits`", Lance A. Glasser & Daniel W. Dobberpuhl, p. 229, FIG. 4.69.

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