Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

2008-05-13

2008-05-13

Laxton, Gary L. (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

Reexamination Certificate

active

11727559

ABSTRACT:
A difference between both emitter voltages of a first transistor having an emitter through which a first current flows, and at least one second transistor having an emitter through which such a second current as to reach a current density thereof smaller than that of the emitter of the first transistor flows, is applied across a first resistor. A second resistor is provided between the emitter of the second transistor and a circuit's ground potential. A third resistor and a fourth resistor are respectively provided between collectors of the first and second transistors and a power supply voltage. Such an output voltage that a collector voltage of the first transistor and a collector voltage of the second transistor become equal is formed in response to the collector voltage of the first transistor and the collector voltage of the second transistor and supplied to bases of the first and second transistors in common. A temperature sense voltage is formed from a connecting point of the first and second resistors.

REFERENCES:
patent: 3962592 (1976-06-01), Thommen et al.
patent: 4292583 (1981-09-01), Hoeft
patent: 07-218347 (1995-08-01), None
patent: 10-009967 (1998-01-01), None

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