1974-05-14
1976-08-24
Wojciechowicz, Edward J.
357 46, 357 52, 357 59, 357 91, H01L 2704, H01L 2702, H01L 2934, H01L 2904
Patent
active
039770192
ABSTRACT:
A semiconductor integrated circuit, in which an isolation region with one conductivity type and a plurality of island regions with another conductivity type separated by the isolation region are provided, is disclosed. In this case, a high resistance polycrystalline semiconductor layer is formed to cover whole of a surface portion of a PN-junction formed between the isolation region and the island regions.
REFERENCES:
patent: 3725150 (1973-04-01), George
IBM - Tech. Bul., vol. 13, No. 5, Oct. 1970, Kemlage "Prevention of Metal to Base Shorting".
Kawana Yoshiyuki
Matsushita Takeshi
Sony Corporation
Wojciechowicz Edward J.
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