Semiconductor integrated circuit

Static information storage and retrieval – Interconnection arrangements

Reexamination Certificate

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Details

C365S149000, C365S154000, C257S371000

Reexamination Certificate

active

10850116

ABSTRACT:
A storage section, at least one writing section, and at least one reading section are provided on a substrate. A storage-section substrate region in which the storage section is formed, at least one writing-section substrate region in which each writing section is formed, at least one reading-section substrate region in which each reading section is formed are insulatedly isolated from each other on the substrate. Independent substrate potentials are applied to each substrate region.

REFERENCES:
patent: 4233672 (1980-11-01), Suzuki et al.
patent: 5404042 (1995-04-01), Okumura et al.
patent: 6501116 (2002-12-01), Kisu et al.
patent: 2003/0099148 (2003-05-01), Slamowitz
patent: 1139879 (1999-02-01), None
J. Lohstroh, et al.; “Worst-Case Static Noise Margin Criteria for Logic Circuits and Their Mathematical Equivalence,” IEEE Journal of Solid-State Circuits, vol. sc-18, No. 16. Dec. 1983, pp. 803-807.

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