Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-09-18
2007-09-18
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S780000, C257S781000, C257SE23144, C257SE23145
Reexamination Certificate
active
11312709
ABSTRACT:
A semiconductor integrated circuit having a plurality of interconnect layers and at least one via connecting interconnects of two adjacent interconnect layers, wherein each interconnect layer has a plurality of first interconnect groups and second interconnect groups arranged respectively in a row and a column in a matrix. The first and the second interconnect groups are alternately arranged in each row and in each column of the matrix arranged facing each other between two adjacent interconnect layers. The first and second interconnect groups facing each other between the layers have crossing parts where they can be connected through vias.
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Arakawa Tomofumi
Ohmori Mutsuhiro
Anya Igwe U.
Baumeister B. William
Kananen Ronald P.
Rader & Fishman & Grauer, PLLC
Sony Corporation
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